Abstract
We present results of our studies concerning electrical and optical properties of In0.48Ga0.52N and InN. Hall measurement were carried out at temperatures between T=77 and 300K. Photoluminescence (PL) spectrum in InN and In0.48Ga0.52N. InN has a single peak at 0.77eV at 300K. However, the PL in In0.48Ga0.52N has two peaks; a prominent peak at 1.16eV and a smaller peak at 1.55eV. These two peaks are attributed to Indium segregation corresponding to a high Indium concentration of 48% and a low concentration of 36%. High electric field measurements indicate that drift velocity that tends to saturate at around Vd=1.0×107cm/s at 77K in InN at an electric field of F=12kV/cm. However, in In0.48Ga0.52N the I–V curve is almost linear up to an electric field of F=45kV/cm, where the drift velocity is Vd=1.39×106cm/s. At applied electric fields above this value a S-type negative differential resistance (NDR) is observed leading to an instability in the current and to the irreversible destruction of the sample.
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