Abstract
The electrical reliability of integrated capacitors to be used for AC-coupled microstrip detectors has been investigated by characterizing a specially designed test chip. Capacitors employing different stacked dielectrics, including double-layer oxide, oxide-nitride, and oxide-nitride-oxide insulators, have been compared in terms of intrinsic breakdown field and extrinsic failure distributions. Results obtained from two fabrication runs are presented and discussed. The impact of the different technological options adopted on diode leakage current and bulk- and surface-generation parameters is also reported.
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