A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process.

Abstract

This paper presents a compact V-band low-noise amplifier (LNA) featuring temperature compensation, implemented in a 130 nm SiGe BiCMOS process. A negative temperature coefficient bias circuit generates an adaptive current for temperature compensation, enhancing the LNA's temperature robustness. A T-type inductive network is employed to establish two dominant poles at different frequencies, significantly broadening the amplifier's bandwidth. Over the wide temperature range of -55 °C to 85 °C, the LNA prototype exhibits a gain variation of less than 1.5 dB at test frequencies from 40 GHz to 65 GHz, corresponding to a temperature coefficient of 0.01 dB/°C. At -55 °C, 25 °C, and 85 °C, the measured peak gains are 25.5 dB, 25 dB, and 24.4 dB, respectively, with minimum noise figures (NF) of 3.0 dB, 3.5 dB, and 4.2 dB, and DC power consumptions of 22.3 mW, 27.6 mW, and 34.4 mW. Moreover, the total silicon area of the LNA chip is 0.37 mm2, including all test pads, while the core area is only 0.09 mm2.