A Compact 1.0–12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15-μm GaAs pHEMT Technology

Abstract

In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC point of view, the proposed MRFB functions as a self-biasing structure to bias transistors in the optimal condition, improving the noise figure (NF) and linearity. Meanwhile, by employing MRFB with source degeneration and input inductor, the proposed LNA achieves wideband flat gain at the AC side. In comparison with traditional topologies, a wide bandwidth of more than 11.5 GHz with low noise figure of less than 2.5 dB can be achieved. To verify the proposed LNA structure, a chip prototype is fabricated in a 0.15- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> GaAs E-mode pHEMT process with a compact die size of only 0.75 mm2 including all the testing pads. From the measurement results, the proposed LNA circuit features a 1.0 to 12.5 GHz 3-dB working bandwidth (172% fractional bandwidth), 23.6 peak gain, 1.51 dB minimum NF, 66.7± 15 ps group delay, and 24.3/12.6 dBm best OIP3/OP1dB, respectively. The total DC power is around 87.5 mW from a single 2.5-V power supply.