Abstract
An InP lateral bipolar transistor has been successfully fabricated on a semi-insulating substrate by implanting Si/sup +/ as the emitter and collector contacts and Mg/sup +/ as the column base. An array of 33 1- mu m-diameter columns with 1- mu m separation between each was formed between the emitter-collector spacing of 3 mu m. A current gain of 290 was obtained at 77 K; it was over 12 at room temperature.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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