Abstract
A small-signal method to determine the interface properties of a thin film transistor is described for the frequency range of 10 Hz to 100 KHz. By measuring the in-phase and out-of-phase change of the channel conductance due to a small ac gate voltage, one can identify the possible nature of the surface states and their time constants. This method has been applied to a SiO-InSb thin film transistor and the results obtained indicates that the interface states are, most likely, located in the SiO, and that these states can follow an ac signal of 7.6 KHz.
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