Abstract
Thin films of AlPO4-5 molecular sieves have been employed as the dielectric phase in a capacitance type chemical sensor. AlPO4-5 was deposited onto titanium nitride (bottom electrode) coated silicon wafers by laser ablation. A subsequent hydrothermal treatment of the ablated AlPO4-5 films was found to enhance the crystallinity. The capacitance sensor configuration was completed by the deposition of Pd/Au pads (upper electrode) through a mask. AlPO4-5 based sensors exhibited significant changes in capacitance upon exposure to small molecules such as CO2, CO, N2, and H2O.
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