Abstract
Sixty-four-bit 259-gate insulated gate buried-channel charge-coupled devices (CCD's) have been fabricated on semi-insulating InP using a planar ion implantation process. These 5-µm gate-length structures, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz and exhibited average effective stored charge per unit area in their channels as high as 6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> electrons cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . Input-to-output delay-time measurements as a function of frequency clearly indicate proper CCD operation.
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