Abstract

A 500V Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (SOI-LIGBT) is proposed in this paper. The device features multiple deep-oxide trenches (MDOT) placed in the silicon region. Two trenches (T1 and T2) are placed in the N-drift region while one trench (T3) locates at the emitter side and shorted with the P+ emitter. T1 and T2 assist in sustaining the electric potential from the collector, which enables the SOI-LIGBT to reduce its drift region length. At the same breakdown voltage of 560V, the drift region length is reduced from 47μm for the conventional SOI-LIGBT to 21.9μm for the proposed SOI-LIGBT. Due to the small-sized drift region, decreased number of stored carriers in the drift region during the turnoff process is realized. T3 acts as a vertical field plate and can accelerate the depletion of the N-drift region during the turn-off process. The proposed MDOT SOI-LIGBT achieves a turn-off loss (E OFF ) 45.7% lower than the conventional SOI-LIGBT at on-state voltage drop (V ON ) of 1.6V.

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