Abstract
A 45GHz Doherty power amplifier is implemented in 45nm SOI CMOS. Two-stack FET amplifiers are used as main and auxiliary amplifiers, allowing a supply voltage of 2.5V and high output power. The use of slow-wave coplanar waveguides (CPW) improves the PAE and gain by approximately 3% and 1dB, and reduces the die area by 20%. This amplifier exhibits more than 18dBm saturated output power, with peak power gain of 7dB. It occupies 0.64mm2 while achieving a peak PAE of 23%; at 6dB back-off the PAE is 17%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
