Abstract
The inherently great ruggedness of a 2000 V non-punchthrough IGBT is demonstrated by operating the device under short-circuit conditions up to 1800 V and nearly 600 A cm −2. Even switching an inductive load without using a freewheeling diode at a current density of 350 A cm −2 is not destructive for the device. An explanation for the principally greater ruggedness of the non-punchthrough device (in comparison with the punchthrough IGBT) is given by a 1-D computer simulation, which leads to a fundamental understanding of the physics of the device.
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