Abstract
AbstractA cascode power amplifier (PA) fabricated in 0.18 μm SiGe BiCMOS technology is presented. The cascode structure is used to provide high voltage gain and high output power. To prevent the negative impact of bond wire, the pseudo‐differential structure is used to provide a virtual ground for signal. Adaptive bias circuit provides stable voltage bias to the base of common‐emitter. With the combination of two completely symmetrical PA units, the whole PA achieves its saturated output power of 30.62 dBm and PAE of 31.75% at 2.1 GHz, and the small signal gain is 26.19 dB.
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