Abstract
A mm-wave IQ power-DAC is reported at W-band. The circuit, which is fabricated in a 45-nm SOI CMOS technology, employs a novel series-stacked Gilbert-cell output stage with gate finger segmentation to directly modulate an 80-95 GHz carrier in amplitude and phase with 8 bits of resolution. Each bit can be switched up to at least 15 Gb/s for an aggregate data rate of 120 Gb/s. A 9-th bit turns the DAC cell on and off at 15 Gb/s, as needed to create an arbitrary 15-Gbaud QAM constellation in a 1-W, 16-cell arrayed I-Q DAC transmitter with free-space power combining and 4-bit antenna-level segmentation. The measured gain, output power, and PAE of each DAC cell are 36 dB, 19 dBm, and 8.9%, respectively. The 8 bits of resolution in each DAC cell are necessary for spectral shaping, pre-distortion, as well as to combat non-idealities in the target 64-QAM digital transmitter.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
