Abstract
A novel approach to design a mm-wave high power gain cascode amplifier is proposed. The gain is enhanced by adjusting the size of the cascode transistor together with a desensitized inductive impedance at its base. The impedance at this node has a critical role in determining both gain and stability. The employed desensitization technique decreases the effect of process variations and modeling errors on this impedance which results in a reliable design. Providing enough degrees of freedom, this method results in a conjugate matched input and output impedances. Therefore, two or more of this stage can be simply cascaded to get higher gain with no need for an interstage matching network and hence no additional loss and gain degradation. Based on this approach, a single stage amplifier at 183 GHz is implemented in a 130 nm SiGe process which has a measured power gain of 9.5 dB, 3 dB bandwidth of 8.5 GHz and saturation power of −2.8 dBm.
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