Abstract
A half-inch size CCD image sensor overlaid with a hydrogen-erated amorphous silicon (α-Si:H) as a photodetector has been developed. The array consists of 506V × 404H picture elements. The glow-discharged α-Si:H film has high quantum efficiency of 0.75-0.8 in the visible wavelength range and low dark current of 0.2 nA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and is formed on the CCD scanner with vertical overflow drain. This CCD image sensor has a sensitivity of 0.014 µA/lx (3200 K)and a S/N ratio of 73 and 68 dB for fixed-pattern noise and random noise, respectively. Smearing signal is suppressed to below 5 percent at incident light intensity of 1000 times saturation exposure. The blooming and highlight lag are completely suppressed by the vertical overflow drain structure.
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