Abstract
This paper illustrates a methodology to design an ultra-low power bandgap voltage reference with high accuracy to counteract the effect of temperature using single BJT and MOSFETs working in subthreshold region. The study provides a new insight into compensation of complementary-to-absolute-temperature(CTAT) with a nano-watt proportional-to-absolute-temperature(PTAT) voltage generator with process variation brought by threshold voltage reduced. Designed in a 180-nm CMOS process technology, the circuit has a measured 26.2-ppm/°C temperature coefficient under a wide range of -40°C~125°C and an overall 0.234% variation coefficient among 9 chips with an active area of 0.0264-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The experimental result shows the voltage reference can operate with a supply voltage down to 1.1-V and a full frequency PSRR better than -35dB while the power consumption is only 6.435-nW.
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