A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology

Abstract

In this paper, a wideband low noise amplifier (LNA) for 60 GHz wireless applications is presented. A single-ended two-stage cascade topology is utilized to realize an ultra-wideband and flat gain response. The first stage adopts a current-reused topology that performs the more than 10 GHz ultra-wideband input impedance matching. The second stage is a cascade common source amplifier that is used to enhance the overall gain and reverse isolation. By proper optimization of the current-reused topology and stagger turning technique, the two-stage cascade common source LNA provides low power consumption and gain flatness over an ultra-wide frequency band with relatively low noise. The LNA is fabricated in Global Foundries 65 nm RFCMOS technology. The measurement results show a maximum $$S_{21}$$S21 gain of 11.4 dB gain with a $$-$$-3 dB bandwidth from 48 to 62 GHz. Within this frequency range, the measured $$S_{11}$$S11 and $$S_{12}$$S12 are less than $$-$$-10 dB and the measured DC power consumption is only 11.2 mW from a single 1.5 V supply.