Abstract
This paper presents techniques for high-voltage isolated converters to achieve high power efficiency at high switching frequencies. To minimize the converter switching loss, an isolated quasi-square-wave zero-voltage switching three-level half-bridge architecture is adopted. An integrated synchronous three-level gate driver is proposed to ensure reliability of all eGaN power FETs and provide fast propagation delays for high-frequency converter operation. Thanks to the auto-reconfigurability of the proposed V SW -based dead-time controller in the gate driver, ZVS of all power FETs with minimal body diode conduction loss can be achieved in a wide input range (110V–250V) to guarantee the reliability of the proposed converter. Implemented in a 0.7μm 700V CMOS-LDMOS process, the proposed gate driver achieves ≤ 18ns propagation delays and enables a 250V 45W isolated three-level converter to achieve the peak power efficiencies of 94.2% and 89.1% at 1MHz and 2MHz, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
