Abstract
An AlGaN/GaN heterojunction FET with a field-modulating plate has been successfully fabricated. A maximum drain current of 900 mA/mm was obtained with a gate–drain breakdown voltage of over 150 V. A 24 mm-wide FET exhibited 96 W (4.0 W/mm) output power, 54% power-added efficiency and 8.5 dB linear gain at a drain bias of 32 V.
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