Abstract
Modern RF signal processing requires high piezoelectric coefficient functional semiconductor to deliver the high frequency, bandwidth, and quality factors required of modern RF communication technologies (5G and above). The focus of this chapter, Aluminum Nitride (AlN), is a material of choice for these applications. We first discuss the material properties and crystal structure of AlN that make it uniquely suitable for communication devices. We highlight that the piezoelectric modulus d33 of AlN is the main determining factor for the performance and energy efficiency of acoustic wave filters. This chapter then compares established and emerging methods to increase d33 in advanced AlN ceramics and discusses their common physical origin from strained crystal structures. Finally, we provide examples of how similar strain engineering approaches can be applied to other technologically relevant ceramics and their respective application fields.
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