Abstract
Wire bonding-that is, connecting LSI chip pad and an interposer substrate by a thin gold wire-is one of the main process in assembly of LSI packages. However, producing a fine-pitch wire bonding, such as that with less than 50-μm pitch, faces some problems. For example, a high-rigidity wire prevents wire flow during molding process, but deteriorates the bondability between the gold ball and an alminum pad on the LSI chip in the bonding process. Accodingly, in this study, we carried out a dynamic stress analysis on a real bonding process in order to clarify the bonding mechanism. It was found that the strain distribution of gold ball bonding interface in the direction of ultrasonication is the main factor for evaluating the bondability between the gold ball and the alminum pad. It was also found that it is possible to evaluate the effect of chip damage on the wire bonding process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
