Abstract
The amorphous avalanche photodiodes (a‐Si APD) have been first introduced into flat‐panel detector. The sensor with a‐Si APD indicate much higher sensitivity than normal PIN PD devices. The ultrasensitive image sensor with a‐Si APD can realize optical fingerprint identification under COE OLED screen with very low transmittance. And the flat‐panel X‐ray detector (FPXD) with a‐Si APD can reduce radiation dose significantly because of its much higher sensitivity compared to traditional FPXD products.
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