7‐3: Invited Paper: High Mobility Self‐Aligned Coplanar Thin‐Film Transistors with a Novel Dual Channel Oxide Semiconductor Architecture

Abstract

Self‐aligned coplanar thin‐film transistors (TFTs) with a novel dual channel architecture comprising of low mobility and high mobility oxide semiconductors show high field‐effect mobility of > 50 cm2/Vs with positive threshold voltage of > 0 V and low off‐leakage current of < 1 pA. The TFTs with dual channel allow higher mobility than TFTs with a single high mobility channel because the TFTs with dual channel allow strong electron accumulation due to high electron densities both at the interface between gate insulator and 1st oxide semiconductor and at the hetero‐junction interface between 1st and 2nd oxide semiconductors.