Abstract
Top‐gate typed amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film‐transistors (TFTs) and a technologically advanced transparent storage capacitance structure have been successfully employed in pixel circuits. The design procedure was systematically studied. Eventually, a 15‐inch gate‐driver‐on‐array (GOA) drived active matrix organic light‐emitting diode (AMOLED) display was demonstrated with a high resolution of 147 ppi.
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