Abstract
A reverse short-channel effect in LOCOS parasitic MOSFETs is investigated by simulations and experiments. Increase in threshold voltage of the MOSFETs is clearly observed as the LOCOS width decreases to 0.5 μm or less, especially for high substrate doping. Analysis using a nonplanar device simulator shows that this enhancement of the threshold voltage arises from the variation in direction of the electric field at the LOCOS isolation edge due to the two-dimensional structural effect of narrow LOCOS isolation. The reverse short-channel effect is explained by the concept of charge sharing, and the dependence of the reverse short-channel effect on substrate doping and junction depth is examined. As substrate doping increases, a shallow junction depth is found to become an influential parameter for this effect.
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