Abstract
We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up than planar IGBTs. Trench IGBTs also showed a higher breakdown voltage(BV/sub CES/) than planar IGBTs. We have confirmed that the trench IGBT realizes the ideal structure, PIN diode+MOS gate, which was proposed at the start of the IGBT development. The trench IGBT would be expected to be a superior high voltage device, especially due to its endurance property for latch-up operation.
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