Abstract
The fabrication of Pt np+ silicon baritt diodes for V-band frequencies is described. An oscillating output power of 1 mW at 60 GHz could be attained. The diodes were investigated as self-oscillating mixers in Doppler-radar and local-oscillator applications. A conversion gain of 26 dB and a minimum detectable signal of ?160 dBm (1 Hz bandwidth) could be measured near the carrier.
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