Abstract
Typically, organic light‐emitting diodes (OLEDs) are characterized only in steady‐state to determine and optimize their efficiency. Adding further electro‐optical measurement techniques in frequency and time domain helps to quantify charge carrier dynamics and provides deeper insight into the device physics. Combining experimental characterization with electro‐optical device simulation allows one to determine specific material parameters such as the charge carrier mobilities of the layers. Moreover, the obtained device model enables a better understanding of the limitations and degradation pathways of the specific OLED device.
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