Abstract
The influence of deposition parameters on the properties of RF sputter deposited c‐axis aligned crystalline (CAAC) IGZO was evaluated using both single parameter and design of experiment (DOE) analysis. Deposition temperature and oxygen partial pressure were found to be primary parameters determining CAAC alignment and crystallinity. CAAC is first formed at a deposition temperature of 185°C, reaching optimal surface normal alignment at ∼315°C. Crystallinity and alignment increase rapidly with oxygen fraction up to 10%, then becoming nearly independent up to 50%. The Zn fraction and (Ga+Zn)/In ratio were identified as key parameters correlated to c‐axis texture in the films. Zinc loss during deposition at high temperatures and low oxygen partial pressures correlated with poor CAAC alignment, while (Ga+Zn)/In ratio approaching an ideal 2.0 ratio exhibited improved CAAC crystallinity.
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