Abstract
This paper presents a 40 W Gallium-Nitride microwave Doherty power amplifier for WCDMA repeater applications. The main and peaking amplifier are implemented using two 20 W PEP GaN HEMTs. Its performance is evaluated for broadband gain, power efficiency and adjacent-channel-power-ratio (ACPR). The experimental results of the GaN Doherty amplifier yielded a power gain over 11 dB from 1.8 GHz to 2.5 GHz, 65% power added efficiency at 40 W peak power. Good linearity performance of ? 55 dBc ACPR is obtained after using a baseband digital pre-distortion technique.
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