Abstract
Low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) are demonstrated by direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates. The PDs have a dark current of 0.1 µA at -3V bias and an internal (external) responsivity of 0.78 A/W (0.27 A/W). The 3 dB bandwidth is 28 GHz, and open eye diagrams are detected at 40 Gbit/s.
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