Abstract
This report describes 3D printed ion-selective field effect transistors (IS-FET), which contains electro-chemical working electrodes for selective ion detection. For the comparison of behaviors, two different types of field effect transistors are fabricated by 3D printing and vacuum deposition. And both types of FETs are integrated with the 3D printed ion-selective electrodes. Then, the sensing performance of these two types of IS-FET has been investigated. The source-drain current for the whole 3D printed IS-FET is in the scale of 10−8 A, which can be compared with current scale of deposited IS-FET with 10−6 A.
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