Abstract
The W/TiN/Ti/Si contact structures needed for ultra-large-scale integrated circuits have been studied using cross-sectional transmission electron microscopy (TEM) and multi-spectral Auger electron microscopy. Access to the Ti/Si interface for chemical characterization using SEM, Auger and electron energy-loss imaging and spectroscopy has been achieved by using a novel method of bevelled polishing of the silicon substrate material. Cross-sectional TEM was used to calibrate the depth scale in the MULSAM image sets, so allowing measurements of the thicknesses of various interfacial layers and the penetration of the ohmic contacts into the silicon. The TiN layer, providing adhesion of the tungsten as well as acting as a diffusion barrier, appears to have a domed shape, which penetrates the tungsten overlayer to a greater extent in the contact centres. The results of this work, combined with earlier, related, studies, enable a three-dimensional characterization of the bottom and sidewall structures in these contacts. © 1998 John Wiley & Sons, Ltd.
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