32 nm high current performance double gate MOSFET for low power CMOS circuits

Abstract

Leakage current increment is a critical challenge in short channel transistors. In this paper, a new high current performance is presented that not only reduces leakage current but also improves the on-current. The key idea in this work is to modify the doping density with inverted-V shape (IVS) in the vertical direction of the channel. By employing IVS doping density, short channel effects such as drain-induced barrier lowering and threshold voltage roll-off improve and the leakage current significantly reduces compared conventional uniform doping double gate MOSFETs. In this paper, by Conduction band energy modification, in weak inversion regime, high potential height is built that carriers cannot inject in to the channel and reduces leakage current. Furthermore, in strong inversion regime, built-in electric field, leads to better channel carriers’ acceleration and transportation which make on-current improvement. So, the high on–off current ratio (Ion/Ioff) is expected.