Abstract
Ion beam sputter etching has been widely used in material surface modification and transmission electron microscope (TEM) sample preparation. Due to the complexity of the ion beam etching process, the quantitative simulation of ion beam sputtering is necessary to guarantee precision in surface treatment and sculpting under different energies and beam currents. In this paper, an application-oriented incident ion beam model was first built with aberrations and Coulomb repulsion forces being considered from the Ga ion source to the sample. The sputtering process of this model on the sample was then analyzed and simulated with an improved stopping and range of ions in matter (SRIM) program. The sputtering performance of this model, the point-like incident beam and the typical Gaussian incident beam was given in the end. Results show that the penetration depth of Ga ions having 30 keV energy in silicon is 28 nm and the radial range is 29.6 nm with 50 pA beam current. The application-oriented model has been verified by our focused ion beam-scanning electron microscopy (FIB-SEM) milling experiment and it will be a potential thermal source in simulating the process of FIB bombarding organic samples.
Highlights
The Focused Ion Beam (FIB) instrument has been developing since developments in the liquid metal ion source (LMIS) during the 1970s [1,2,3,4]
The stopping and range of ions in metter (SRIM) program was improved for the application-oriented model by editing the script file with the spatial positions and landing angles of all ions at the surface of Si substrate
In order to research the sputtering performance systematically, the point-like incident beam, the Gaussian distribution beam with the same beam energy and beam spot and the application-oriented model were simulated with the same energy and dose
Summary
The Focused Ion Beam (FIB) instrument has been developing since developments in the liquid metal ion source (LMIS) during the 1970s [1,2,3,4]. Parameters of the incident ion beam include ion dose, ion energy, incident angle and Gaussian beam current density These conclusions are not suitable for the FIB system as the Coulomb repulsion forces among ions make the incident beam different from the ideal. Gaussian distribution and this change will influence the sputtering performance [25,26]. In order to guarantee the precision in FIB fabrication under different beam energies and beam currents, a new application-oriented model including aberrations and Coulomb repulsion forces was brought forward in simulating ion-solid interaction. Ion-solid interaction was simulated through the improved SRIM program with an application-oriented ion beam model, whose beam current distributions include aberrations and Coulomb repulsion forces among ions. The sputtering performance of this model and its comparison to the typical Gaussian incident beam were given in detail
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