Abstract
In this work, we report a separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~2.1 μm at 300 K grown by molecular beam epitaxy. The electron-dominated avalanche mechanism multiplication region was designed as a multi-quantum well structure consisting of AlAsSb/GaSb H-structure superlattice and Al<sub>0.3</sub>In<sub>0.7</sub>AsSb digital alloy. At room temperature, the device exhibits a maximum multiplication gain of 79 under -13.3 bias voltage.
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