Abstract
AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm2/V·s with low sheet resistance of 342Ω/ was obtained with In composition 0.19.
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