Abstract
AbstractExoelectron emission from MgO thin film was measured by attaching a high precision current sensor to the address electrode of rear plate of test panels of AC‐PDP. The measured results revealed that the exoelectron emission currents vary very sensitively with the type of doping elements used and measuring temperatures. The activation energy of the exo‐electron emissions estimated from the emission curves indicated that the trap levels lies between 0.05∼0.32eV below the bottom of its conduction band. This suggests that shallow electron trap levels within MgO film are mainly responsible for the exo‐electron emissions, rather than deep trap levels like F‐type centers.
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