Abstract
This chapter discusses the basic concepts, circuits, and technologies for gate drives in power converters, mainly focusing on voltage-controlled devices like power MOSFETs and IGBTs. Global trends towards energy efficiency over the last three decades have facilitated the need for technological advancements in the design and control of power electronic converters for energy processing. Voltage-controlled devices are semiconductors which require a constant voltage drive on the gate control terminal in order to remain in conduction. The input drive requirements of these devices are substantially lower than their current-driven counterparts and are the preferred choice in modern power electronics. Two such devices are the power MOSFET and the IGBT which are forced commutated switching devices being fully controlled at the gate terminal under normal operating conditions. Both MOSFETs and IGBTs require sufficient charge deposited into their gate junctions, whilst maintaining a minimum gate threshold voltage in order to remain in conduction. When designing a gate driver, it is always important to understand both the static and dynamic behavior of the semiconductor devices used as it aids the effectiveness of the design for a given gate driver system.
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