Abstract
GeSn alloys have emerged as a promising material for realizing CMOS-compatible light sources. GeSn lasers demonstrated to date have large device footprints and active areas, which limit the realization of densely integrated lasers operating at low power consumption. Thanks to their intrinsically small device form factors, 1D photonic crystal lasers may offer opportunities to overcome such limitations of large GeSn lasers. Here, we present a 1D photonic crystal nanobeam laser with a very small device footprint (~7 μm<sup>2</sup>) and a compact active area (~1.2 μm<sup>2</sup>) on a GeSn-on-insulator substrate.
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