Abstract
The hole lifetime τp in the n-base and isothermal (pulse) current–voltage characteristics have been measured in 4H–SiC diodes with a 10 kV blocking voltage (100 μm base width). The τp value found from open circuit voltage decay (OCVD) measurements is 3.7 μs at room temperature. To the best of the authors’ knowledge, the above value of τp is the highest reported for 4H–SiC. The forward voltage drops VF are 3.44 V at current density j = 100 A/cm2 and 5.45 V at j = 1000 A/cm2. A very deep modulation of the blocking base by injected non-equilibrium carriers has been demonstrated. Calculations in term of a simple semi-analytical model describe well the experimental results obtained.
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