Abstract
We report in this conference the modeling analysis of absorption and color conversion characteristics of III‐nitride micro‐LED arrays embedded with nanostructures. While nanoporous GaN layers in the micro‐LED pixels have been reported to function as the color‐converting element by incorporating quantum dot‐based nanophosphor inside the porous cavity, our computational study reveals that extraction efficiencies of both excitation (blue) and down‐conversion (red) light from the nanophosphor‐coupled LED structure decrease dramatically with porosity and the thickness of embeded down‐conversion layer s. The cross‐talk of down‐conversion light between adjacent micro‐LED pixels is also found to be substantially higher compared to the excitation light cross‐talk due to the location of the phosphors in the pore cavities and the resultant strong scattering by the surrounding nanopores. Studying and attempting to overcome those color‐conversion challenges of the nanoporous GaN based micro‐LEDs could pave the way of developing full‐color miro‐LED display panels that simultaneously preserve the high‐resolution and efficiency performances of micro‐LED display devices.
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