Abstract
In order to investigate the evaporation phenomena of small droplet which arises by spin drying process of Si wafer after CMP processing, a minute droplet was dropped on the various Si wafer The evaporation behavior was captured by the microscope camera. From the photograph, the contact angle and the contact area of droplet were estimated The difference m the evaporation process by time progress was observed. The droplet evaporation process was mainly categorized into two types, i.e. constant contact angle and constant contact area types. The residual area of the watermark which appears after constant contact area evaporation was larger than that of constant contact angle evaporation.
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