Abstract
Pt Schottky rectifier arrays were fabricated on 200-μm-thick, freestanding GaN layers. Even with the reduced dislocation density in these layers (∼105 cm−2) relative to conventional GaN on sapphire (>108 cm−2), rectifiers fabricated on the freestanding GaN show a strong dependence of reverse breakdown on contact diameter. We show that by interconnecting the output of many (∼130) smaller (500 μm×500 μm) rectifiers, we can achieve high total forward output current (161 A at 7.12 V), low forward turn-on voltage of ∼3 V, and maintain the reverse breakdown voltage. The on/off ratio of the rectifier array was ∼8×107 at 5 V/−100 V.
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