Abstract
The effects of mechanical stress and gate bias stress on dual‐gate a‐IGZO thin‐film transistors on a flexible substrate were investigated. Both tensile and compressive stresses increased free electrons and deep states in a‐IGZO. More deep defects will be formed under strong tensile stress, while small compressive stress can repair defects in the relatively poor quality etch‐stop layer. Moisture still influence the stability even for the TFTs with etch stop layer and passivation layer under gate bias stress test.
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