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15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer
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15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer
https://doi.org/10.1109/led.2024.3524540
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 Journal: IEEE Electron Device Letters |  Publication Date: Mar 1, 2025 |
Affiliation: Xidian University
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