Abstract
Organic thin‐film transistor (OTFT) with solution‐process, low process temperature (< 120°C), high performance, good uniformity and excellent stability is achieved. Also, a systematic comparison of device performance and reliability of OTFT and a‐Si:H TFT is performed in this research. Due to the excellent device characteristics, especially of the bias stability, the OTFT technology nowadays is comparable even overwhelming to the mass production a‐Si:H TFT technology. The commercialization of organic electronics driven by OTFT backplane is expected.
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