Abstract
We investigated the effect of p-type modulation doping on the laser performance in 1.3 μm InAsP compressively strained MQW lasers grown by gas-source molecular beam-epitaxy (GSMBE) for the first time. A sharp modulation doping profile of beryllium was confirmed by secondary ion mass spectroscopy. A very low threshold current of 6 mA was obtained for buried heterostucture lasers doped with 5×10 18 cm −3 of 300 μm-long cavity with cleaved facets. By using p-type MD-MQW lasers, the gain coefficient was confirmed to increase by about 100 cm −1 compared to undoped MQW lasers from the measurement of cavity length dependence of threshold current density. Further, differential gain was confirmed to increase by a factor of 1.34 from the relative intensity noise spectrum.
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