Abstract

Zero-dimensional graphene quantum dots (GQDs) have lately intrigued intensive interest because of their great promise in energy, optoelectronic, and bio-imaging applications. Herein, we demonstrated the fabrication of highly efficient GQDs/n-silicon heterojunction solar cells via a simple solution process. Owing to the unique band structure, the GQDs layer could not only serve as hole transport layer to facilitate the separation of photo-generated electron-hole pairs, but also act as electron blocking layer to suppress the carrier recombination at anode. Moreover, graphene was used as the transparent top electrode for the heterojunction solar cells, ensuring the efficient light absorption and carrier collection. By adjusting the sizes of GQDs and the thickness of GQDs layer, a power conversion efficiency (PCE) as high as 12.35% under AM 1.5G irradiation was achieved, which represented a new efficiency record for this new-type solar cell. The devices also exhibited excellent stability in air due to the high chemical/physical stability of GQDs and graphene. The successful achievement of the high-efficiency GQDs/Si heterojunction solar cells opens up the opportunities for their potential applications in high-performance and low-cost photovoltaics.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.