Abstract
AbstractWe used a resist‐assisted patterning (RAP) process for the growth of CNTs as electron emitters. The electron emission sites were easily controlled by simple resist patterning process. To obtain stabilized and enhanced electron emission, post growth treatment process was adopted. The electron emission current strongly depended on the post growth treatment conditions. The electron emission current was increased with increasing acid treatment time up to 20 second. The enhanced electron emission current was more enhanced with consecutive post growth temperature and acid treatment. After 20 sec post growth treatment on robust CNTs, we can obtain 1.62 mA/cm2 current density at 4 V/μm field. The controlled electron emission current of CNT emitter array with RAP process and structural improvement of CNT‐FEAs after HF treatment for enhanced electron emission was discussed.
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